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FQP9N30

FQP9N30 onsemi

fqp9n30-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 300V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
auf Bestellung 994 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.76 EUR
10+ 4.27 EUR
100+ 3.43 EUR
500+ 2.82 EUR
Mindestbestellmenge: 6
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Technische Details FQP9N30 onsemi

Description: MOSFET N-CH 300V 9A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V, Power Dissipation (Max): 98W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V.

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FQP9N30 Hersteller : ON Semiconductor / Fairchild FQP9N30-1300928.pdf MOSFET 300V N-Channel QFET
auf Bestellung 749 Stücke:
Lieferzeit 14-28 Tag (e)
FQP9N30 FQP9N30 Hersteller : ON Semiconductor fqp9n30jp-d.pdf Trans MOSFET N-CH 300V 9A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
FQP9N30 Hersteller : ON Semiconductor fqp9n30jp-d.pdf Trans MOSFET N-CH 300V 9A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
FQP9N30 Hersteller : ON Semiconductor fqp9n30jp-d.pdf Trans MOSFET N-CH 300V 9A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
FQP9N30 Hersteller : ONSEMI fqp9n30-d.pdf FQP9N30 THT N channel transistors
Produkt ist nicht verfügbar
FQP9N30 FQP9N30 Hersteller : Fairchild Semiconductor fqp9n30-d.pdf Description: Power Field-Effect Transistor, 9
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Produkt ist nicht verfügbar