FQPF10N50CF Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
auf Bestellung 67211 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 222+ | 3.24 EUR |
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Technische Details FQPF10N50CF Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 610mOhm @ 5A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V.
Weitere Produktangebote FQPF10N50CF nach Preis ab 5.17 EUR bis 7.12 EUR
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FQPF10N50CF | Hersteller : onsemi / Fairchild |
MOSFET 500V N-Ch MOSFET |
auf Bestellung 1983 Stücke: Lieferzeit 14-28 Tag (e) |
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FQPF10N50CF | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FQPF10N50CF | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.35A; Idm: 40A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.35A Pulsed drain current: 40A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 610mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQPF10N50CF | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.35A; Idm: 40A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.35A Pulsed drain current: 40A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 610mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |