FQPF12N60T

FQPF12N60T Fairchild Semiconductor


FAIRS17575-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 5.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.9A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 1336 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
286+2.52 EUR
Mindestbestellmenge: 286
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Technische Details FQPF12N60T Fairchild Semiconductor

Description: MOSFET N-CH 600V 5.8A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc), Rds On (Max) @ Id, Vgs: 700mOhm @ 2.9A, 10V, Power Dissipation (Max): 55W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V.

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FQPF12N60T Hersteller : ONSEMI FAIRS17575-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - FQPF12N60T - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 1336 Stücke:
Lieferzeit 14-21 Tag (e)
FQPF12N60T FQPF12N60T Hersteller : ON Semiconductor 1073603210777658fqpf12n60.pdf Trans MOSFET N-CH 600V 5.8A 3-Pin(3+Tab) TO-220F T/R
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