FQPF13N50

FQPF13N50 Fairchild Semiconductor


FAIRS38889-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 12.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 6.25A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 2475 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
222+3.24 EUR
Mindestbestellmenge: 222
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Technische Details FQPF13N50 Fairchild Semiconductor

Description: MOSFET N-CH 500V 12.5A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc), Rds On (Max) @ Id, Vgs: 430mOhm @ 6.25A, 10V, Power Dissipation (Max): 56W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.

Weitere Produktangebote FQPF13N50

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FQPF13N50 Hersteller : FAIRCHILD FAIRS38889-1.pdf?t.download=true&u=5oefqw FQP_PF13N50_Rev_March2013.pdf 02+
auf Bestellung 510 Stücke:
Lieferzeit 21-28 Tag (e)
FQPF13N50 Hersteller : ONSEMI FAIRS38889-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - FQPF13N50 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
FQPF13N50 FQPF13N50
Produktcode: 42632
FAIRS38889-1.pdf?t.download=true&u=5oefqw FQP_PF13N50_Rev_March2013.pdf Verschiedene Bauteile > Verschiedene Bauteile 2
Produkt ist nicht verfügbar
FQPF13N50 FQPF13N50 Hersteller : onsemi FQP_PF13N50_Rev_March2013.pdf Description: MOSFET N-CH 500V 12.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 6.25A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Produkt ist nicht verfügbar
FQPF13N50 FQPF13N50 Hersteller : onsemi / Fairchild fqpf13n50-1192234.pdf MOSFET 500V N-Channel QFET
Produkt ist nicht verfügbar