Technische Details FQPF18N50V2 FAIRCHILD
Description: MOSFET N-CH 500V 18A TO220F, Packaging: Tape & Reel (TR), Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V, Power Dissipation (Max): 69W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V.
Weitere Produktangebote FQPF18N50V2
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
FQPF18N50V2 | Hersteller : FAIRCHILD |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
|||
FQPF18N50V2 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220F |
Produkt ist nicht verfügbar |
||
FQPF18N50V2 | Hersteller : onsemi |
Description: MOSFET N-CH 500V 18A TO220F Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V |
Produkt ist nicht verfügbar |
||
FQPF18N50V2 | Hersteller : onsemi / Fairchild | MOSFET 500V N-Ch QFET V2 Series |
Produkt ist nicht verfügbar |