FQPF19N20C ONSEMI
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 200V
Drain current: 12.1A
On-state resistance: 0.17Ω
Type of transistor: N-MOSFET
Power dissipation: 43W
Polarisation: unipolar
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 200V
Drain current: 12.1A
On-state resistance: 0.17Ω
Type of transistor: N-MOSFET
Power dissipation: 43W
Polarisation: unipolar
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
43+ | 1.69 EUR |
48+ | 1.52 EUR |
54+ | 1.34 EUR |
62+ | 1.16 EUR |
65+ | 1.1 EUR |
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Produktbewertung abgeben
Technische Details FQPF19N20C ONSEMI
Description: MOSFET N-CH 200V 19A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V, Power Dissipation (Max): 43W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V.
Weitere Produktangebote FQPF19N20C nach Preis ab 0.83 EUR bis 3.98 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FQPF19N20C | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Drain-source voltage: 200V Drain current: 12.1A On-state resistance: 0.17Ω Type of transistor: N-MOSFET Power dissipation: 43W Polarisation: unipolar Technology: QFET® Kind of channel: enhanced Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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FQPF19N20C | Hersteller : ON Semiconductor | Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 774 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF19N20C | Hersteller : ON Semiconductor | Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 780 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF19N20C | Hersteller : onsemi |
Description: MOSFET N-CH 200V 19A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V |
auf Bestellung 768 Stücke: Lieferzeit 21-28 Tag (e) |
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FQPF19N20C | Hersteller : onsemi / Fairchild | MOSFET 200V N-Channel Advance Q-FET |
auf Bestellung 7450 Stücke: Lieferzeit 14-28 Tag (e) |
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FQPF19N20C | Hersteller : ON Semiconductor | Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 780 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF19N20C | Hersteller : ON Semiconductor | Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FQPF19N20C | Hersteller : ON Semiconductor | Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |