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FQPF47P06YDTU

FQPF47P06YDTU onsemi / Fairchild


FQPF47P06_D-2313778.pdf Hersteller: onsemi / Fairchild
MOSFET -60V -30A P-Channel
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Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+7.96 EUR
10+ 7.18 EUR
25+ 6.76 EUR
100+ 5.77 EUR
Mindestbestellmenge: 7
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Technische Details FQPF47P06YDTU onsemi / Fairchild

Description: MOSFET P-CH 60V 30A TO220F-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3 (Y-Forming), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V.

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FQPF47P06YDTU FQPF47P06YDTU Hersteller : ON Semiconductor fqpf47p06cn-d.pdf Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) TO-220F Tube
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FQPF47P06YDTU FQPF47P06YDTU Hersteller : onsemi fqpf47p06-d.pdf Description: MOSFET P-CH 60V 30A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
FQPF47P06YDTU FQPF47P06YDTU Hersteller : ONSEMI fqpf47p06-d.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; Idm: -120A; 62W
Mounting: THT
Case: TO220FP
Kind of package: tube
Pulsed drain current: -120A
Power dissipation: 62W
Gate charge: 110nC
Polarisation: unipolar
Drain current: -21.2A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Produkt ist nicht verfügbar