FQPF4N90CT ON Semiconductor
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Technische Details FQPF4N90CT ON Semiconductor
Description: MOSFET N-CH 900V 4A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2A, 10V, Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V.
Weitere Produktangebote FQPF4N90CT
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FQPF4N90CT | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FQPF4N90CT | Hersteller : onsemi |
Description: MOSFET N-CH 900V 4A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V |
Produkt ist nicht verfügbar |