FQPF5N50CYDTU Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 5
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
auf Bestellung 34713 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 390+ | 1.85 EUR |
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Technische Details FQPF5N50CYDTU Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 5, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3 (Y-Forming), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V.
Weitere Produktangebote FQPF5N50CYDTU nach Preis ab 2.96 EUR bis 4.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FQPF5N50CYDTU | Hersteller : onsemi / Fairchild |
MOSFET 500V N-Channel QFET |
auf Bestellung 3077 Stücke: Lieferzeit 14-28 Tag (e) |
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| FQPF5N50CYDTU | Hersteller : ONSEMI |
Description: ONSEMI - FQPF5N50CYDTU - Leistungs-MOSFET, n-Kanal, 500 V, 5 A, 1.14 ohm, TO-220F Drain-Source-Spannung Vds: 500 Dauer-Drainstrom Id: 5 Qualifikation: - Verlustleistung Pd: 38 Gate-Source-Schwellenspannung, max.: 4 Verlustleistung: 38 Bauform - Transistor: TO-220F Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 1.14 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 1.14 SVHC: Lead (17-Jan-2022) |
auf Bestellung 589 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF5N50CYDTU | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220F Tube |
Produkt ist nicht verfügbar |
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FQPF5N50CYDTU | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Pulsed drain current: 20A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQPF5N50CYDTU | Hersteller : onsemi |
Description: MOSFET N-CH 500V 5A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQPF5N50CYDTU | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Pulsed drain current: 20A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |