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FQPF630

FQPF630 onsemi


fqpf630-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 200V 6.3A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.15A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 993 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
464+1.56 EUR
Mindestbestellmenge: 464
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Technische Details FQPF630 onsemi

Description: MOSFET N-CH 200V 6.3A TO220F, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 3.15A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V.

Weitere Produktangebote FQPF630

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FQPF630 FQPF630 Hersteller : onsemi / Fairchild FQPF630_D-2314133.pdf MOSFET 200V N-Channel QFET
auf Bestellung 1473 Stücke:
Lieferzeit 14-28 Tag (e)
FQPF630 Hersteller : FSC fqpf630-d.pdf 09+ TO220
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
FQPF630 FQPF630 Hersteller : ON Semiconductor fqpf630jp-d.pdf Trans MOSFET N-CH 200V 6.3A 3-Pin(3+Tab) TO-220FP Tube
Produkt ist nicht verfügbar
FQPF630 FQPF630 Hersteller : ONSEMI fqpf630-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4A; Idm: 25.2A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4A
Pulsed drain current: 25.2A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQPF630 FQPF630 Hersteller : onsemi fqpf630-d.pdf Description: MOSFET N-CH 200V 6.3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.15A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Produkt ist nicht verfügbar
FQPF630 FQPF630 Hersteller : ONSEMI fqpf630-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4A; Idm: 25.2A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4A
Pulsed drain current: 25.2A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar