FQPF7N60 ON Semiconductor
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 62+ | 2.52 EUR |
| 68+ | 2.23 EUR |
| 100+ | 1.94 EUR |
| 250+ | 1.79 EUR |
| 500+ | 1.63 EUR |
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Technische Details FQPF7N60 ON Semiconductor
Description: MOSFET N-CH 600V 4.3A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 2.2A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V.
Weitere Produktangebote FQPF7N60 nach Preis ab 2.96 EUR bis 6.66 EUR
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FQPF7N60 | Hersteller : onsemi |
 Description: MOSFET N-CH 600V 4.3A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.2A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V |
auf Bestellung 21 Stücke: Lieferzeit 21-28 Tag (e) |
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FQPF7N60 | Hersteller : onsemi / Fairchild |
MOSFET 600V N-Channel QFET |
auf Bestellung 480 Stücke: Lieferzeit 14-28 Tag (e) |
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auf Bestellung 17450 Stücke: Lieferzeit 21-28 Tag (e) |
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FQPF7N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 4.3A 3-Pin(3+Tab) TO-220FP Tube |
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FQPF7N60 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.7A; Idm: 17.2A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.7A Pulsed drain current: 17.2A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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FQPF7N60 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.7A; Idm: 17.2A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.7A Pulsed drain current: 17.2A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |