FQPF9N25CT

FQPF9N25CT onsemi / Fairchild


FQPF9N25C_D-2313966.pdf Hersteller: onsemi / Fairchild
MOSFET N-CH/250V/9A/QFET
auf Bestellung 153 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4 EUR
15+ 3.61 EUR
100+ 2.81 EUR
500+ 2.31 EUR
Mindestbestellmenge: 13
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Technische Details FQPF9N25CT onsemi / Fairchild

Description: MOSFET N-CH 250V 8.8A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc), Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V.

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FQPF9N25CT FQPF9N25CT Hersteller : ON Semiconductor fqpf9n25cjp-d.pdf Trans MOSFET N-CH 250V 8.8A 3-Pin(3+Tab) TO-220FP Tube
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FQPF9N25CT FQPF9N25CT Hersteller : onsemi fqpf9n25c-d.pdf Description: MOSFET N-CH 250V 8.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Produkt ist nicht verfügbar