auf Bestellung 42903 Stücke:
Lieferzeit 116-130 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 26+ | 2.05 EUR |
| 29+ | 1.8 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.09 EUR |
Produktrezensionen
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Technische Details FQT13N06TF onsemi / Fairchild
Description: MOSFET N-CH 60V 2.8A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 1.4A, 10V, Power Dissipation (Max): 2.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223-4, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V.
Weitere Produktangebote FQT13N06TF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FQT13N06TF | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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FQT13N06TF | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.24A Pulsed drain current: 11.2A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±25V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQT13N06TF | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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FQT13N06TF | Hersteller : onsemi |
Description: MOSFET N-CH 60V 2.8A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 1.4A, 10V Power Dissipation (Max): 2.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQT13N06TF | Hersteller : onsemi |
Description: MOSFET N-CH 60V 2.8A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 1.4A, 10V Power Dissipation (Max): 2.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQT13N06TF | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.24A Pulsed drain current: 11.2A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±25V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |