FQT1N60CTF-WS onsemi
Hersteller: onsemiDescription: MOSFET N-CH 600V 200MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 1.74 EUR |
| 18+ | 1.52 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.75 EUR |
| 2000+ | 0.67 EUR |
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Technische Details FQT1N60CTF-WS onsemi
Description: MOSFET N-CH 600V 200MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Tc), Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V, Power Dissipation (Max): 2.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.
Weitere Produktangebote FQT1N60CTF-WS nach Preis ab 0.67 EUR bis 1.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FQT1N60CTF-WS | Hersteller : onsemi / Fairchild |
MOSFET 600V 0.2A 11.5Ohm N-Channel |
auf Bestellung 23900 Stücke: Lieferzeit 196-210 Tag (e) |
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FQT1N60CTF-WS | Hersteller : onsemi |
Description: MOSFET N-CH 600V 200MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V Power Dissipation (Max): 2.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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FQT1N60CTF-WS | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 0.2A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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FQT1N60CTF-WS | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.12A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQT1N60CTF-WS | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.12A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |