FQT7N10LTF ONSEMI
Hersteller: ONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.36A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1020 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 85+ | 0.85 EUR |
| 115+ | 0.62 EUR |
| 159+ | 0.45 EUR |
| 168+ | 0.43 EUR |
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Technische Details FQT7N10LTF ONSEMI
Description: MOSFET N-CH 100V 1.7A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 850mA, 10V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-223-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V.
Weitere Produktangebote FQT7N10LTF nach Preis ab 0.43 EUR bis 1.72 EUR
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FQT7N10LTF | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223 Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.36A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1020 Stücke: Lieferzeit 14-21 Tag (e) |
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FQT7N10LTF | Hersteller : onsemi |
Description: MOSFET N-CH 100V 1.7A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 850mA, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V |
auf Bestellung 2391 Stücke: Lieferzeit 21-28 Tag (e) |
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FQT7N10LTF | Hersteller : onsemi / Fairchild |
MOSFET 100V Single |
auf Bestellung 2138 Stücke: Lieferzeit 14-28 Tag (e) |
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FQT7N10LTF | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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FQT7N10LTF | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQT7N10LTF | Hersteller : ON-Semicoductor |
N-MOSFET 100V 1.7A FQT7N10LTF TFQT7n10ltf Anzahl je Verpackung: 10 Stücke |
auf Bestellung 46 Stücke: Lieferzeit 7-14 Tag (e) |
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FQT7N10LTF Produktcode: 106433 |
Hersteller : Fairchild |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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FQT7N10LTF | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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FQT7N10LTF | Hersteller : onsemi |
Description: MOSFET N-CH 100V 1.7A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 850mA, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V |
Produkt ist nicht verfügbar |