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FQU13N10LTU

FQU13N10LTU onsemi / Fairchild

FQU13N10L_D-1810105.pdf Hersteller: onsemi / Fairchild
MOSFET 100V N-Ch QFET Logic Level
auf Bestellung 1323 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
24+2.18 EUR
29+ 1.81 EUR
100+ 1.44 EUR
500+ 1.18 EUR
Mindestbestellmenge: 24
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Technische Details FQU13N10LTU onsemi / Fairchild

Description: MOSFET N-CH 100V 10A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V, Power Dissipation (Max): 2.5W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: I-PAK, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V.

Weitere Produktangebote FQU13N10LTU nach Preis ab 35.75 EUR bis 35.75 EUR

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FQU13N10LTU Hersteller : ONSEMI fqu13n10l-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 180mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+35.75 EUR
Mindestbestellmenge: 2
FQU13N10LTU FQU13N10LTU Hersteller : ON Semiconductor fqu13n10l-d.pdf Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) IPAK Tube
Produkt ist nicht verfügbar
FQU13N10LTU FQU13N10LTU Hersteller : onsemi fqu13n10l-d.pdf Description: MOSFET N-CH 100V 10A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Produkt ist nicht verfügbar