FQU1N60CTU onsemi / Fairchild
auf Bestellung 2463 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 1.87 EUR |
| 34+ | 1.53 EUR |
| 100+ | 1.21 EUR |
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Technische Details FQU1N60CTU onsemi / Fairchild
Description: MOSFET N-CH 600V 1A IPAK, Packaging: Tube, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V, Power Dissipation (Max): 2.5W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.
Weitere Produktangebote FQU1N60CTU
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FQU1N60CTU | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 5040 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQU1N60CTU | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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| FQU1N60CTU | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.6A Pulsed drain current: 4A Power dissipation: 28W Case: IPAK Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: THT Gate charge: 6.2nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQU1N60CTU | Hersteller : onsemi |
Description: MOSFET N-CH 600V 1A IPAK Packaging: Tube Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FQU1N60CTU | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.6A Pulsed drain current: 4A Power dissipation: 28W Case: IPAK Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: THT Gate charge: 6.2nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |