FQU20N06TU

FQU20N06TU Fairchild Semiconductor


FAIRS18342-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 60V 16.8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
auf Bestellung 20736 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
683+1.05 EUR
Mindestbestellmenge: 683
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Technische Details FQU20N06TU Fairchild Semiconductor

Description: MOSFET N-CH 60V 16.8A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc), Rds On (Max) @ Id, Vgs: 63mOhm @ 8.4A, 10V, Power Dissipation (Max): 2.5W (Ta), 38W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: IPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V.

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FQU20N06TU FAIRS18342-1.pdf?t.download=true&u=5oefqw
auf Bestellung 3670 Stücke:
Lieferzeit 21-28 Tag (e)