FQU2N50BTU_WS Fairchild Semiconductor
auf Bestellung 4969 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details FQU2N50BTU_WS Fairchild Semiconductor
Description: MOSFET N-CH 500V 1.6A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 5.3Ohm @ 800mA, 10V, Power Dissipation (Max): 2.5W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Supplier Device Package: IPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V.
Weitere Produktangebote FQU2N50BTU_WS
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FQU2N50BTU-WS | Hersteller : onsemi / Fairchild |
 MOSFET Power MOSFET |
auf Bestellung 4732 Stücke: Lieferzeit 14-28 Tag (e) |
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FQU2N50BTU-WS | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 1.6A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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FQU2N50BTU-WS | Hersteller : onsemi |
Description: MOSFET N-CH 500V 1.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 800mA, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V |
Produkt ist nicht verfügbar |