auf Bestellung 4558 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 3.72 EUR |
| 16+ | 3.35 EUR |
| 100+ | 2.63 EUR |
| 500+ | 2.16 EUR |
Produktrezensionen
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Technische Details FQU2N90TU-AM002 onsemi / Fairchild
Description: MOSFET N-CH 900V 1.7A I-PAK, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc), Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V, Power Dissipation (Max): 2.5W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: IPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V.
Weitere Produktangebote FQU2N90TU-AM002 nach Preis ab 1.54 EUR bis 1.54 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FQU2N90TU_AM002 | Hersteller : Fairchild Semiconductor |
 Description: MOSFET N-CH 900V 1.7A IPAK |
auf Bestellung 1044 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQU2N90TU-AM002 | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 900V 1.7A I-PAK Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
auf Bestellung 977 Stücke: Lieferzeit 21-28 Tag (e) |
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FQU2N90TU-AM002 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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| FQU2N90TU-AM002 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: THT Case: IPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQU2N90TU-AM002 | Hersteller : onsemi |
Description: MOSFET N-CH 900V 1.7A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FQU2N90TU-AM002 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: THT Case: IPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω |
Produkt ist nicht verfügbar |