FQU5P20TU

FQU5P20TU onsemi / Fairchild


FQU5P20_D-1810076.pdf Hersteller: onsemi / Fairchild
MOSFET 200V P-Channel QFET
auf Bestellung 4936 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.69 EUR
10+ 1.51 EUR
100+ 1.18 EUR
500+ 0.98 EUR
Mindestbestellmenge: 2
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Technische Details FQU5P20TU onsemi / Fairchild

Description: MOSFET P-CH 200V 3.7A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V, Power Dissipation (Max): 2.5W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: IPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V.

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FQU5P20TU Hersteller : Fairchild fqu5p20-d.pdf
auf Bestellung 20690 Stücke:
Lieferzeit 21-28 Tag (e)
FQU5P20TU Hersteller : ONSEMI fqu5p20-d.pdf FQU5P20TU THT P channel transistors
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FQU5P20TU FQU5P20TU Hersteller : onsemi fqu5p20-d.pdf Description: MOSFET P-CH 200V 3.7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Produkt ist nicht verfügbar