FQU9N25TU

FQU9N25TU Fairchild Semiconductor


ONSM-S-A0003588092-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 7
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 6099 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
538+1.33 EUR
Mindestbestellmenge: 538
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Technische Details FQU9N25TU Fairchild Semiconductor

Description: POWER FIELD-EFFECT TRANSISTOR, 7, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V, Power Dissipation (Max): 2.5W (Ta), 55W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: I-PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V.

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FQU9N25TU FQU9N25TU Hersteller : ON Semiconductor / Fairchild FQU9N25-D-1809942.pdf MOSFET 250V N-Channel QFET
auf Bestellung 3843 Stücke:
Lieferzeit 14-28 Tag (e)
FQU9N25TU FQU9N25TU Hersteller : ON Semiconductor fqu9n25.pdf Trans MOSFET N-CH 250V 7.4A 3-Pin(3+Tab) IPAK Tube
Produkt ist nicht verfügbar
FQU9N25TU Hersteller : ONSEMI ONSM-S-A0003588092-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Pulsed drain current: 29.6A
Power dissipation: 55W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 420mΩ
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQU9N25TU Hersteller : ONSEMI ONSM-S-A0003588092-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Pulsed drain current: 29.6A
Power dissipation: 55W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 420mΩ
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar