Technische Details FR303G EIC Semiconductor
Description: DIODE GEN PURP 200V 3A DO201AD, Packaging: Tape & Box (TB), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 140 V.
Weitere Produktangebote FR303G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FR303G | Hersteller : YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 125A; DO27; Ufmax: 1.3V Type of diode: rectifying Max. off-state voltage: 200V Max. forward voltage: 1.3V Load current: 3A Semiconductor structure: single diode Case: DO27 Mounting: THT Features of semiconductor devices: fast switching; glass passivated Max. forward impulse current: 125A Kind of package: tape Reverse recovery time: 150ns Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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FR303G | Hersteller : SMC Diode Solutions |
Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 140 V |
Produkt ist nicht verfügbar |
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FR303G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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FR303G | Hersteller : Taiwan Semiconductor | Rectifiers 150ns, 3A, 200V, Fast Recovery Rectifier |
Produkt ist nicht verfügbar |
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FR303G | Hersteller : YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 125A; DO27; Ufmax: 1.3V Type of diode: rectifying Max. off-state voltage: 200V Max. forward voltage: 1.3V Load current: 3A Semiconductor structure: single diode Case: DO27 Mounting: THT Features of semiconductor devices: fast switching; glass passivated Max. forward impulse current: 125A Kind of package: tape Reverse recovery time: 150ns |
Produkt ist nicht verfügbar |