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FS10R12VT3BOMA1

FS10R12VT3BOMA1 Infineon Technologies


Infineon-FS10R12VT3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b431225b53a0 Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 16A 64W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 64 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
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Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+47.8 EUR
Mindestbestellmenge: 16
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Technische Details FS10R12VT3BOMA1 Infineon Technologies

Description: IGBT MODULE 1200V 16A 64W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 64 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 700 pF @ 25 V.

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FS10R12VT3BOMA1 FS10R12VT3BOMA1 Hersteller : Infineon Technologies 737db_fs10r12vt3.pdffolderiddb3a304412b407950112b4095b0601e3fileiddb.pdf Trans IGBT Module N-CH 1200V 16A 64000000mW 11-Pin EASY750-1 Tray
Produkt ist nicht verfügbar
FS10R12VT3BOMA1 Hersteller : INFINEON TECHNOLOGIES FS10R12VT3.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Power dissipation: 64W
Case: AG-EASY750-1
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Anzahl je Verpackung: 40 Stücke
Produkt ist nicht verfügbar
FS10R12VT3BOMA1 FS10R12VT3BOMA1 Hersteller : Infineon Technologies Infineon-FS10R12VT3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b431225b53a0 Description: IGBT MODULE 1200V 16A 64W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 64 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
Produkt ist nicht verfügbar
FS10R12VT3BOMA1 Hersteller : INFINEON TECHNOLOGIES FS10R12VT3.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Power dissipation: 64W
Case: AG-EASY750-1
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Produkt ist nicht verfügbar