auf Bestellung 231 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 76.26 EUR |
10+ | 70.33 EUR |
25+ | 63.44 EUR |
120+ | 59.54 EUR |
280+ | 56.68 EUR |
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Technische Details FS20R06VE3 Infineon Technologies
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 20A, Type of module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge x3, Max. off-state voltage: 0.6kV, Collector current: 20A, Case: AG-EASY750-1, Application: Inverter, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 40A, Power dissipation: 71.5W, Technology: EasyPACK™, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote FS20R06VE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FS20R06VE3 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 20A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3 Max. off-state voltage: 0.6kV Collector current: 20A Case: AG-EASY750-1 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 40A Power dissipation: 71.5W Technology: EasyPACK™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FS20R06VE3 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 20A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3 Max. off-state voltage: 0.6kV Collector current: 20A Case: AG-EASY750-1 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 40A Power dissipation: 71.5W Technology: EasyPACK™ |
Produkt ist nicht verfügbar |