FS50R12KT3BOSA1 Infineon Technologies
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Technische Details FS50R12KT3BOSA1 Infineon Technologies
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Application: Inverter, Case: AG-ECONO2-6, Pulsed collector current: 100A, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Type of module: IGBT, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 50A, Topology: IGBT three-phase bridge; NTC thermistor, Power dissipation: 280W, Technology: EconoPACK™ 2, Mechanical mounting: screw.
Weitere Produktangebote FS50R12KT3BOSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
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FS50R12KT3BOSA1 | Hersteller : Infineon Technologies | Trans IGBT Module N-CH 1200V 75A 280W 28-Pin ECONO2-6 Tray |
Produkt ist nicht verfügbar |
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FS50R12KT3BOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: Inverter Case: AG-ECONO2-6 Pulsed collector current: 100A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 50A Topology: IGBT three-phase bridge; NTC thermistor Power dissipation: 280W Technology: EconoPACK™ 2 Mechanical mounting: screw |
Produkt ist nicht verfügbar |