FS75R12W2T4B11BOMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MOD 1200V 107A 375W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 375 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 180.08 EUR |
| 15+ | 163.19 EUR |
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Technische Details FS75R12W2T4B11BOMA1 Infineon Technologies
Description: IGBT MOD 1200V 107A 375W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 107 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 375 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V.
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| FS75R12W2T4B11BOMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 75A Case: AG-EASY2B-2 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 375W Technology: EasyPACK™ 2B Mechanical mounting: screw |
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