FST7335M GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 35A D61-3M
Packaging: Bulk
Package / Case: D61-3M
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: D61-3M
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 35 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Description: DIODE MOD SCHOTT 35V 35A D61-3M
Packaging: Bulk
Package / Case: D61-3M
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: D61-3M
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 35 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
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Technische Details FST7335M GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 35A D61-3M, Packaging: Bulk, Package / Case: D61-3M, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 35A, Supplier Device Package: D61-3M, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 35 V, Voltage - Forward (Vf) (Max) @ If: 700 mV @ 35 A, Current - Reverse Leakage @ Vr: 1 mA @ 35 V.