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FZ1200R17HE4HOSA2

FZ1200R17HE4HOSA2 Infineon Technologies


infineon-fz1200r17he4-ds-v02_03-en_de.pdffileiddb3a30433e4143bd01.pdf Hersteller: Infineon Technologies
IHM-B IGBT module
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Technische Details FZ1200R17HE4HOSA2 Infineon Technologies

Description: IGBT MOD 1700V 1200A 7800W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single Switch, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 1200 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 7800 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 97 nF @ 25 V.

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FZ1200R17HE4HOSA2 FZ1200R17HE4HOSA2 Hersteller : Infineon Technologies Infineon-FZ1200R17HE4-DS-v02_04-EN.pdf?fileId=db3a30433e4143bd013e46841ca34055 Description: IGBT MOD 1700V 1200A 7800W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 7800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 97 nF @ 25 V
Produkt ist nicht verfügbar