FZ1200R17HP4HOSA2 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MOD 1700V 1200A 7800W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 7800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 97 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 1570.09 EUR |
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Technische Details FZ1200R17HP4HOSA2 Infineon Technologies
Description: IGBT MOD 1700V 1200A 7800W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single Switch, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1200A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench, Part Status: Active, Current - Collector (Ic) (Max): 1200 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 7800 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 97 nF @ 25 V.