FZ1800R17KE3B2NOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MODULE 1700V 1800A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 2850 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 12.5 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 160 nF @ 25 V
auf Bestellung 232 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3728.92 EUR |
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Technische Details FZ1800R17KE3B2NOSA1 Infineon Technologies
Description: IGBT MODULE 1700V 1800A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.8kA, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 2850 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 12.5 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 160 nF @ 25 V.
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Description: IGBT MODULE 1700V 1800A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.8kA NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 2850 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 12.5 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 160 nF @ 25 V |
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