G1M

G1M Yangzhou Yangjie Electronic Technology Co.,Ltd


G1A%20THRU%20G1M.pdf Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 1960 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
67+0.39 EUR
75+ 0.35 EUR
136+ 0.19 EUR
500+ 0.12 EUR
1000+ 0.08 EUR
Mindestbestellmenge: 67
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Technische Details G1M Yangzhou Yangjie Electronic Technology Co.,Ltd

Description: DIODE GEN PURP 1KV 1A SOD123FL, Packaging: Tape & Reel (TR), Package / Case: SOD-123F, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-123FL, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.

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G1M G1M Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd G1A%20THRU%20G1M.pdf Description: DIODE GEN PURP 1KV 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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