G2305

G2305 Goford Semiconductor


products-detail.php?ProId=57 Hersteller: Goford Semiconductor
Description: MOSFET P-CH 20V 4.8A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
auf Bestellung 90000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.088 EUR
15000+ 0.081 EUR
30000+ 0.074 EUR
Mindestbestellmenge: 3000
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Technische Details G2305 Goford Semiconductor

Description: MOSFET P-CH 20V 4.8A SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V, FET Feature: Standard, Power Dissipation (Max): 1.7W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V.

Weitere Produktangebote G2305 nach Preis ab 0.044 EUR bis 1.01 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
G2305 G2305 Hersteller : Goford Semiconductor products-detail.php?ProId=57 Description: P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.19 EUR
Mindestbestellmenge: 3000
G2305 G2305 Hersteller : Goford Semiconductor products-detail.php?ProId=57 Description: P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
auf Bestellung 8940 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
26+1.01 EUR
36+ 0.72 EUR
100+ 0.37 EUR
500+ 0.3 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 26
G2305 Hersteller : GOFORD Semiconductor products-detail.php?ProId=57 P-CH,-20V,-4.8A,RD(max) Less Than 50mOhm at -4.5V,RD(max) Less Than 70mOhm at -2.5V,VTH -0.45V to -1.0V ,SOT-23
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.057 EUR
15000+ 0.051 EUR
30000+ 0.044 EUR
Mindestbestellmenge: 3000
G2305 Hersteller : GMT products-detail.php?ProId=57 SOT-23 07+
auf Bestellung 4180 Stücke:
Lieferzeit 21-28 Tag (e)