G2R1000MT33J GeneSiC Semiconductor
auf Bestellung 1020 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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6+ | 28.7 EUR |
10+ | 25.05 EUR |
25+ | 22.73 EUR |
100+ | 20.98 EUR |
250+ | 19.37 EUR |
500+ | 17.13 EUR |
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Technische Details G2R1000MT33J GeneSiC Semiconductor
Description: SIC MOSFET N-CH 4A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 2mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 3300 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V.
Weitere Produktangebote G2R1000MT33J nach Preis ab 17.13 EUR bis 48.59 EUR
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G2R1000MT33J | Hersteller : GeneSiC Semiconductor | Trans MOSFET N-CH SiC 3.3KV 4A 8-Pin(7+Tab) TO-263 |
auf Bestellung 1020 Stücke: Lieferzeit 14-21 Tag (e) |
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G2R1000MT33J | Hersteller : GeneSiC Semiconductor | MOSFET 3300V 1000mohm TO-263-7 G2R SiC MOSFET |
auf Bestellung 2581 Stücke: Lieferzeit 14-28 Tag (e) |
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G2R1000MT33J | Hersteller : GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 4A TO263-7 Packaging: Tube Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 2mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 3300 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V |
auf Bestellung 1441 Stücke: Lieferzeit 21-28 Tag (e) |
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G2R1000MT33J | Hersteller : GENESIC SEMICONDUCTOR |
Description: GENESIC SEMICONDUCTOR - G2R1000MT33J - Siliziumkarbid-MOSFET, Eins, n-Kanal, 4 A, 3.3 kV, 1 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 3.3kV rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 74W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: G2R productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 1ohm SVHC: Lead (19-Jan-2021) |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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G2R1000MT33J | Hersteller : GeneSiC Semiconductor | Trans MOSFET N-CH SiC 3.3KV 4A |
Produkt ist nicht verfügbar |
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G2R1000MT33J | Hersteller : GeneSiC Semiconductor | Trans MOSFET N-CH SiC 3.3KV 4A |
Produkt ist nicht verfügbar |
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G2R1000MT33J | Hersteller : GeneSiC Semiconductor | Trans MOSFET N-CH SiC 3.3KV 4A 8-Pin(7+Tab) TO-263 |
Produkt ist nicht verfügbar |
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G2R1000MT33J | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 4A; Idm: 8A; 74W; TO263-7 Mounting: SMD Case: TO263-7 Polarisation: unipolar Pulsed drain current: 8A Drain-source voltage: 3.3kV Drain current: 4A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 74W Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 21nC Technology: G2R™; SiC Kind of channel: enhanced Gate-source voltage: -5...20V Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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G2R1000MT33J | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 4A; Idm: 8A; 74W; TO263-7 Mounting: SMD Case: TO263-7 Polarisation: unipolar Pulsed drain current: 8A Drain-source voltage: 3.3kV Drain current: 4A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 74W Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 21nC Technology: G2R™; SiC Kind of channel: enhanced Gate-source voltage: -5...20V |
Produkt ist nicht verfügbar |