G2SB60-E3D/P

G2SB60-E3D/P Vishay General Semiconductor - Diodes Division


Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE BRIDGE
Packaging: Tape & Reel (TR)
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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Technische Details G2SB60-E3D/P Vishay General Semiconductor - Diodes Division

Description: DIODE BRIDGE, Packaging: Tape & Reel (TR), Package / Case: 4-SIP, GBL, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBL, Part Status: Obsolete, Voltage - Peak Reverse (Max): 600 V, Current - Average Rectified (Io): 1.5 A, Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA, Current - Reverse Leakage @ Vr: 5 µA @ 600 V.

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G2SB60-E3D/P Hersteller : Vishay General Semiconductor Vishay
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