G3R160MT17D GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 1000 V
Description: SIC MOSFET N-CH 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 1000 V
auf Bestellung 887 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 29.38 EUR |
10+ | 26.58 EUR |
25+ | 25.52 EUR |
100+ | 24.03 EUR |
250+ | 23.1 EUR |
500+ | 22.4 EUR |
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Technische Details G3R160MT17D GeneSiC Semiconductor
Description: SIC MOSFET N-CH 21A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V, Power Dissipation (Max): 175W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 5mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 1000 V.
Weitere Produktangebote G3R160MT17D nach Preis ab 12.68 EUR bis 32.89 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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G3R160MT17D | Hersteller : GeneSiC Semiconductor | MOSFET 1700V 160mO TO-247-3 G3R SiC MOSFET |
auf Bestellung 2966 Stücke: Lieferzeit 14-28 Tag (e) |
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G3R160MT17D | Hersteller : GeneSiC SEMICONDUCTOR | G3R160MT17D THT N channel transistors |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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G3R160MT17D Produktcode: 175078 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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