G3R20MT12K GeneSiC SEMICONDUCTOR
Hersteller: GeneSiC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Drain-source voltage: 1.2kV
Drain current: 90A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 542W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 219nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 240A
Case: TO247-4
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 71.5 EUR |
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Technische Details G3R20MT12K GeneSiC SEMICONDUCTOR
Description: SIC MOSFET N-CH 128A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 128A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V, Power Dissipation (Max): 542W (Tc), Vgs(th) (Max) @ Id: 2.69V @ 15mA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V.
Weitere Produktangebote G3R20MT12K nach Preis ab 70.85 EUR bis 87.23 EUR
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G3R20MT12K | Hersteller : GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W Drain-source voltage: 1.2kV Drain current: 90A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 542W Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 219nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 240A Case: TO247-4 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R20MT12K | Hersteller : GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 128A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 128A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V Power Dissipation (Max): 542W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 15mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V |
auf Bestellung 495 Stücke: Lieferzeit 21-28 Tag (e) |
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G3R20MT12K | Hersteller : GeneSiC Semiconductor |
MOSFET 1200V 20mohm TO-247-4 G3R SiC MOSFET |
auf Bestellung 1051 Stücke: Lieferzeit 14-28 Tag (e) |
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| G3R20MT12K | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
Produkt ist nicht verfügbar |