G3R20MT12N GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: SIC MOSFET N-CH 105A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
auf Bestellung 232 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 134.94 EUR |
| 10+ | 124.34 EUR |
| 25+ | 120.36 EUR |
| 100+ | 114.57 EUR |
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Technische Details G3R20MT12N GeneSiC Semiconductor
Description: SIC MOSFET N-CH 105A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 105A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V, Power Dissipation (Max): 365W (Tc), Vgs(th) (Max) @ Id: 2.69V @ 15mA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +20V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V.
Weitere Produktangebote G3R20MT12N nach Preis ab 121.19 EUR bis 135.88 EUR
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Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R20MT12N | Hersteller : GeneSiC SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 74A Pulsed drain current: 240A Power dissipation: 365W Case: SOT227B Gate-source voltage: -5...15V On-state resistance: 20mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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G3R20MT12N | Hersteller : GeneSiC SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 74A Pulsed drain current: 240A Power dissipation: 365W Case: SOT227B Gate-source voltage: -5...15V On-state resistance: 20mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |