G3R30MT12J GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: SIC MOSFET N-CH 96A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Power Dissipation (Max): 459W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
auf Bestellung 66 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 54.26 EUR |
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Technische Details G3R30MT12J GeneSiC Semiconductor
Description: SIC MOSFET N-CH 96A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 96A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V, Power Dissipation (Max): 459W (Tc), Vgs(th) (Max) @ Id: 2.69V @ 12mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V.
Weitere Produktangebote G3R30MT12J nach Preis ab 51.17 EUR bis 61.36 EUR
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G3R30MT12J | Hersteller : GeneSiC Semiconductor |
MOSFET 1200V 30mO TO-263-7 G3R SiC MOSFET |
auf Bestellung 1665 Stücke: Lieferzeit 14-28 Tag (e) |
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| G3R30MT12J | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
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| G3R30MT12J | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
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G3R30MT12J | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 68A Pulsed drain current: 200A Power dissipation: 459W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 30mΩ Mounting: SMD Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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G3R30MT12J | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 68A Pulsed drain current: 200A Power dissipation: 459W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 30mΩ Mounting: SMD Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |