G3R450MT17D GeneSiC Semiconductor
auf Bestellung 581 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 10.56 EUR |
| 17+ | 8.98 EUR |
| 30+ | 8.18 EUR |
| 120+ | 7.58 EUR |
| 270+ | 7.08 EUR |
| 510+ | 6.6 EUR |
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Technische Details G3R450MT17D GeneSiC Semiconductor
Description: SIC MOSFET N-CH 9A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 2mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V.
Weitere Produktangebote G3R450MT17D nach Preis ab 6.6 EUR bis 17.45 EUR
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G3R450MT17D | Hersteller : GeneSiC Semiconductor |
 Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 581 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R450MT17D | Hersteller : GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 9A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 2mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V |
auf Bestellung 1574 Stücke: Lieferzeit 21-28 Tag (e) |
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G3R450MT17D | Hersteller : GeneSiC Semiconductor |
MOSFET 1700V 450mohm TO-247-3 G3R SiC MOSFET |
auf Bestellung 3196 Stücke: Lieferzeit 14-28 Tag (e) |
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G3R450MT17D | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| G3R450MT17D | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R450MT17D | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
Produkt ist nicht verfügbar |
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G3R450MT17D | Hersteller : GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 6A Pulsed drain current: 16A Power dissipation: 88W Case: TO247-3 Gate-source voltage: -5...15V On-state resistance: 0.45Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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G3R450MT17D | Hersteller : GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 6A Pulsed drain current: 16A Power dissipation: 88W Case: TO247-3 Gate-source voltage: -5...15V On-state resistance: 0.45Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |