G3R450MT17J GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 9A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
Description: SIC MOSFET N-CH 9A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
auf Bestellung 7662 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 20.9 EUR |
10+ | 18.85 EUR |
25+ | 18.09 EUR |
100+ | 17 EUR |
250+ | 16.32 EUR |
500+ | 15.81 EUR |
1000+ | 15.45 EUR |
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Technische Details G3R450MT17J GeneSiC Semiconductor
Description: SIC MOSFET N-CH 9A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V, Power Dissipation (Max): 91W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 2mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V.
Weitere Produktangebote G3R450MT17J nach Preis ab 9.17 EUR bis 21.63 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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G3R450MT17J | Hersteller : GeneSiC Semiconductor | MOSFET 1700V 450mO TO-263-7 G3R SiC MOSFET |
auf Bestellung 2991 Stücke: Lieferzeit 14-28 Tag (e) |
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G3R450MT17J | Hersteller : GeneSiC SEMICONDUCTOR | G3R450MT17J SMD N channel transistors |
auf Bestellung 859 Stücke: Lieferzeit 7-14 Tag (e) |
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G3R450MT17J | Hersteller : GeneSiC Semiconductor | Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 838 Stücke: Lieferzeit 14-21 Tag (e) |