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G3R75MT12K

G3R75MT12K GeneSiC SEMICONDUCTOR

G3R75MT12K.pdf Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Drain-source voltage: 1.2kV
Drain current: 29A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 207W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 54nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 80A
Case: TO247-4
Anzahl je Verpackung: 1 Stücke
auf Bestellung 539 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+17.59 EUR
6+ 12.37 EUR
7+ 11.7 EUR
Mindestbestellmenge: 5
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Technische Details G3R75MT12K GeneSiC SEMICONDUCTOR

Description: SIC MOSFET N-CH 41A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V, Power Dissipation (Max): 207W (Tc), Vgs(th) (Max) @ Id: 2.69V @ 7.5mA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V.

Weitere Produktangebote G3R75MT12K nach Preis ab 11.7 EUR bis 26.05 EUR

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G3R75MT12K G3R75MT12K Hersteller : GeneSiC SEMICONDUCTOR G3R75MT12K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Drain-source voltage: 1.2kV
Drain current: 29A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 207W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 54nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 80A
Case: TO247-4
auf Bestellung 539 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+17.59 EUR
6+ 12.37 EUR
7+ 11.7 EUR
Mindestbestellmenge: 5
G3R75MT12K G3R75MT12K Hersteller : GeneSiC Semiconductor G3R75MT12K.pdf Description: SIC MOSFET N-CH 41A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 207W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
auf Bestellung 710 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+25.87 EUR
10+ 23.31 EUR
25+ 22.35 EUR
100+ 21.01 EUR
250+ 20.14 EUR
500+ 19.54 EUR
Mindestbestellmenge: 2
G3R75MT12K G3R75MT12K Hersteller : GeneSiC Semiconductor G3R75MT12K-2449503.pdf MOSFET 1200V 75mohm TO-247-4 G3R SiC MOSFET
auf Bestellung 1852 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
2+26.05 EUR
10+ 23.45 EUR
30+ 22.52 EUR
120+ 21.14 EUR
270+ 20.28 EUR
510+ 19.66 EUR
1020+ 19.37 EUR
Mindestbestellmenge: 2
G3R75MT12K Hersteller : GeneSiC Semiconductor g3r75mt12k.pdf Silicon Carbide MOSFET N Channel Enhancement Mode
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)