GA08JT17-247 GeneSiC Semiconductor
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Technische Details GA08JT17-247 GeneSiC Semiconductor
Description: TRANS SJT 1700V 8A TO247AB, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C), Rds On (Max) @ Id, Vgs: 250mOhm @ 8A, Power Dissipation (Max): 48W (Tc), Supplier Device Package: TO-247AB, Drain to Source Voltage (Vdss): 1700 V.
Weitere Produktangebote GA08JT17-247
| Foto | Bezeichnung | Hersteller | Beschreibung |
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GA08JT17-247 | Hersteller : GeneSiC Semiconductor |
 Description: TRANS SJT 1700V 8A TO247ABPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C) Rds On (Max) @ Id, Vgs: 250mOhm @ 8A Power Dissipation (Max): 48W (Tc) Supplier Device Package: TO-247AB Drain to Source Voltage (Vdss): 1700 V |
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