GA100JT17-227 GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: TRANS SJT 1700V 160A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 100A
Power Dissipation (Max): 535W (Tc)
Supplier Device Package: SOT-227
Part Status: Obsolete
Drain to Source Voltage (Vdss): 1700 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V
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Technische Details GA100JT17-227 GeneSiC Semiconductor
Description: TRANS SJT 1700V 160A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 100A, Power Dissipation (Max): 535W (Tc), Supplier Device Package: SOT-227, Part Status: Obsolete, Drain to Source Voltage (Vdss): 1700 V, Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V.