GA10JT12-263 GeneSiC Semiconductor

Description: TRANS SJT 1200V 25A, Packaging: Tube, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 10A, Power Dissipation (Max): 170W (Tc), Drain to Source Voltage (Vdss): 1200 V, Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V.