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GA10SICP12-263

GA10SICP12-263 GeneSiC Semiconductor


GA10SICP12-263-612649.pdf Hersteller: GeneSiC Semiconductor
MOSFET 1200V 25A Std SIC CoPak
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Technische Details GA10SICP12-263 GeneSiC Semiconductor

Description: TRANS SJT 1200V 25A D2PAK, Packaging: Tube, Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, Power Dissipation (Max): 170W (Tc), Supplier Device Package: TO-263-7, Part Status: Active, Drain to Source Voltage (Vdss): 1200 V, Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V.

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GA10SICP12-263 GA10SICP12-263 Hersteller : GeneSiC Semiconductor GA10SICP12-263.pdf Description: TRANS SJT 1200V 25A D2PAK
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A
Power Dissipation (Max): 170W (Tc)
Supplier Device Package: TO-263-7
Part Status: Active
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V
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