Technische Details GA200SA60U IR
Description: IGBT MOD 600V 200A 500W SOT227B, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: SOT-227B, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 500 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 16.5 nF @ 30 V.
Weitere Produktangebote GA200SA60U
| Foto | Bezeichnung | Hersteller | Beschreibung |
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GA200SA60U | Hersteller : Vishay |
 Insulated Gate Bipolar Module Transistor |
Produkt ist nicht verfügbar |
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GA200SA60U | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 600V 200A 500W SOT227B Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 500 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 16.5 nF @ 30 V |
Produkt ist nicht verfügbar |
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| GA200SA60U | Hersteller : Vishay Semiconductors |
IGBT Transistors 600V SINGLE IGBT ULTRAFAST (8-60KHZ) SOT 227 |
Produkt ist nicht verfügbar |