GA20JT12-263 GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: TRANS SJT 1200V 45A D2PAK
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 20A
Power Dissipation (Max): 282W (Tc)
Supplier Device Package: TO-263-7
Part Status: Active
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V
auf Bestellung 31 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 95.52 EUR |
| 10+ | 88.11 EUR |
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Technische Details GA20JT12-263 GeneSiC Semiconductor
Description: TRANS SJT 1200V 45A D2PAK, Packaging: Tube, Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 20A, Power Dissipation (Max): 282W (Tc), Supplier Device Package: TO-263-7, Part Status: Active, Drain to Source Voltage (Vdss): 1200 V, Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V.
Weitere Produktangebote GA20JT12-263
| Foto | Bezeichnung | Hersteller | Beschreibung |
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GA20JT12-263 | Hersteller : GeneSiC Semiconductor |
JFET 1200V 45A Standard |
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