GAN041-650WSBQ NEXPERIA
Hersteller: NEXPERIACategory: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Type of transistor: N-JFET/N-MOSFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Drain-source voltage: 650V
Drain current: 33.4A
Pulsed drain current: 240A
Power dissipation: 187W
Case: SOT429; TO247
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 18.68 EUR |
| 5+ | 17.66 EUR |
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Technische Details GAN041-650WSBQ NEXPERIA
Description: GAN041-650WSB/SOT429/TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: GaNFET (Cascode Gallium Nitride FET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 10V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.
Weitere Produktangebote GAN041-650WSBQ nach Preis ab 17.66 EUR bis 43.29 EUR
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GAN041-650WSBQ | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V Type of transistor: N-JFET/N-MOSFET Technology: GaN Polarisation: unipolar Kind of transistor: cascode; HEMT Drain-source voltage: 650V Drain current: 33.4A Pulsed drain current: 240A Power dissipation: 187W Case: SOT429; TO247 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 22nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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GAN041-650WSBQ | Hersteller : Nexperia |
MOSFET GAN041-650WSB/SOT429/TO-247 |
auf Bestellung 197 Stücke: Lieferzeit 14-28 Tag (e) |
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GAN041-650WSBQ | Hersteller : Nexperia USA Inc. |
Description: GAN041-650WSB/SOT429/TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
auf Bestellung 284 Stücke: Lieferzeit 21-28 Tag (e) |
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GAN041-650WSBQ | Hersteller : NEXPERIA |
Description: NEXPERIA - GAN041-650WSBQ - Galliumnitrid (GaN)-Transistor, 650 V, 47.2 A, 0.041 ohm, 22 nC, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 47.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 22nC Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.041ohm |
auf Bestellung 323 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN041-650WSBQ | Hersteller : NEXPERIA |
650 V, 35 mOhm Gallium Nitride FET in a TO-247 package 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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GAN041-650WSBQ | Hersteller : NEXPERIA |
650 V, 35 mOhm Gallium Nitride FET in a TO-247 package 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |