auf Bestellung 102 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 46.96 EUR |
| 10+ | 43.86 EUR |
| 30+ | 41.05 EUR |
| 60+ | 39.68 EUR |
| 120+ | 38.74 EUR |
| 270+ | 35.28 EUR |
| 510+ | 32.71 EUR |
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Technische Details GAN063-650WSAQ Nexperia
Description: GANFET N-CH 650V 34.5A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: GaNFET (Cascode Gallium Nitride FET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V, Power Dissipation (Max): 143W (Ta), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V.
Weitere Produktangebote GAN063-650WSAQ nach Preis ab 32.09 EUR bis 48.39 EUR
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GAN063-650WSAQ | Hersteller : Nexperia USA Inc. |
 Description: GANFET N-CH 650V 34.5A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V Power Dissipation (Max): 143W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V |
auf Bestellung 564 Stücke: Lieferzeit 21-28 Tag (e) |
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GAN063-650WSAQ | Hersteller : NEXPERIA |
Description: NEXPERIA - GAN063-650WSAQ - Galliumnitrid (GaN)-Transistor, Gan FET, 650 V, 34.5 A, 0.06 ohm, 15 nC, TP-247, Durchsteckmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code Gate-Ladung, typ.: 15nC rohsCompliant: YES Anzahl der Pins: 3Pin(s) euEccn: NLR hazardous: false Drain-Source-Spannung Vds: 650V Drain-Source-Durchgangswiderstand: 0.06ohm rohsPhthalatesCompliant: YES Dauer-Drainstrom Id: 34.5A usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
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| GAN063-650WSAQ | Hersteller : NXP |
Trans MOSFET N-CH GaN 650V 34.5A 3-Pin(3+Tab) TO-247 GAN063-650WSAQ TGAN063-650WSAQ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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GAN063-650WSAQ | Hersteller : NEXPERIA |
Trans MOSFET N-CH GaN 650V 34.5A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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GAN063-650WSAQ | Hersteller : NEXPERIA |
Trans MOSFET N-CH GaN 650V 34.5A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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GAN063-650WSAQ | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V Type of transistor: N-JFET/N-MOSFET Technology: GaN Polarisation: unipolar Kind of transistor: cascode; HEMT Drain-source voltage: 650V Drain current: 24.4A Pulsed drain current: 150A Power dissipation: 143W Case: SOT429; TO247 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: THT Gate charge: 15nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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GAN063-650WSAQ | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V Type of transistor: N-JFET/N-MOSFET Technology: GaN Polarisation: unipolar Kind of transistor: cascode; HEMT Drain-source voltage: 650V Drain current: 24.4A Pulsed drain current: 150A Power dissipation: 143W Case: SOT429; TO247 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: THT Gate charge: 15nC Kind of package: tube |
Produkt ist nicht verfügbar |